anisotropic etch.control. Other halocarbons, as well as the presence of air or oxygen, are detrimental to the control of theTetrafluoride results in superior control of the process, which results in better dimensional and profile. A higher purity Carbonor CF2conditions, the fluorine free radicals are typically in the form of CF3Carbon Tetrafluoride is relatively inert under normal conditions and is an asphyxiant. Under RF plasmaprocesses. Carbon Tetrafluoride is used with oxygen to etch polysilicon, silicon dioxide, and silicon nitride.Carbon Tetrafluoride is a source of fluorine or carbon fluoride free radicals used in a variety of wafer etch
Contact Now